CHA3396-QDG

Ref. : DSCHA3396-QDG5260 -17 Sep 15

1/16

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

27-33.5GHz Medium Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA3396-QDG is a 3 stage monolithic

medium power amplifier, which produces

22dB gain for 19dBm output power.

It

is

designed

for

a

wide

range

of

applications, from military to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through

the

substrate,

air

bridges

and

electron beam gate lithography.

It is supplied in RoHS compliant SMD

package.

Main Features

Output Power & PAE versus Frequency

■ Broadband performances: 27-33.5GHz

■ 19dBm Pout at 1dB compression

■ 22dB gain

■ 30dBm OTOI

■ DC bias: Vd= 4.0V, Id= 155mA

■ 24L-QFN4x4 (QDG)

■ MSL1

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Frequency range

27.0

33.5

GHz

Gain

Linear Gain

22

dB

P-1dB

Output Power @1dB comp.

19

dBm

OTOI

3

30

dBm

10

12

14

16

18

20

22

24

26

28

30

23

24

25

26

27

28

29

30

31

32

33

34

Frequency (GHz)

Psat

P-1dB

PAE sat

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3396

YYWW