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PMN70XPEA Datasheet(PDF) 6 Page - NXP Semiconductors |
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PMN70XPEA Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page NXP Semiconductors PMN70XPEA 20 V, single P-channel Trench MOSFET PMN70XPEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 19 June 2014 6 / 16 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tamb = 150 °C - - -10 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -2 A; Tj = 25 °C - 70 85 mΩ VGS = -4.5 V; ID = -2 A; Tj = 150 °C - 98 118 mΩ RDSon drain-source on-state resistance VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C - 101 129 mΩ gfs forward transconductance VDS = -10 V; ID = -2 A; Tj = 25 °C - 7 - S Dynamic characteristics QG(tot) total gate charge - 5.2 7.8 nC QGS gate-source charge - 1.1 - nC QGD gate-drain charge VDS = -10 V; ID = -2 A; VGS = -4.5 V; Tj = 25 °C - 1.3 - nC Ciss input capacitance - 602 - pF Coss output capacitance - 101 - pF Crss reverse transfer capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 75 - pF td(on) turn-on delay time - 7 - ns tr rise time - 13 - ns td(off) turn-off delay time - 40 - ns tf fall time VDS = -10 V; ID = -2 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 17 - ns Source-drain diode VSD source-drain voltage IS = -0.5 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V |
Similar Part No. - PMN70XPEA_15 |
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Similar Description - PMN70XPEA_15 |
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