PMN70XPEA_15 datasheet(6/16 Pages) PHILIPS

Part #	PMN70XPEA

Description	20 V, single P-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PMN70XPEA

20 V, single P-channel Trench MOSFET

PMN70XPEA

All information provided in this document is subject to legal disclaimers.

Product data sheet

19 June 2014

6 / 16

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-20

-

V

VGSth

gate-source threshold

voltage

ID = -250 µA; VDS = VGS; Tj = 25 °C

-0.75

-1

-1.25

V

VDS = -20 V; VGS = 0 V; Tj = 25 °C

-

-1

µA

IDSS

drain leakage current

VDS = -20 V; VGS = 0 V; Tamb = 150 °C

-

-10

µA

VGS = 12 V; VDS = 0 V; Tj = 25 °C

-

10

µA

IGSS

gate leakage current

VGS = -12 V; VDS = 0 V; Tj = 25 °C

-

-10

µA

VGS = -4.5 V; ID = -2 A; Tj = 25 °C

-

70

85

mΩ

VGS = -4.5 V; ID = -2 A; Tj = 150 °C

-

98

118

mΩ

RDSon

drain-source on-state

resistance

VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C

-

101

129

mΩ

gfs

forward

transconductance

VDS = -10 V; ID = -2 A; Tj = 25 °C

-

7

-

S

Dynamic characteristics

QG(tot)

total gate charge

-

5.2

7.8

nC

QGS

gate-source charge

-

1.1

-

nC

QGD

gate-drain charge

VDS = -10 V; ID = -2 A; VGS = -4.5 V;

Tj = 25 °C

-

1.3

-

nC

Ciss

input capacitance

-

602

-

pF

Coss

output capacitance

-

101

-

pF

Crss

reverse transfer

capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

75

-

pF

td(on)

turn-on delay time

-

7

-

ns

tr

rise time

-

13

-

ns

td(off)

turn-off delay time

-

40

-

ns

tf

fall time

VDS = -10 V; ID = -2 A; VGS = -4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

17

-

ns

Source-drain diode

VSD

source-drain voltage

IS = -0.5 A; VGS = 0 V; Tj = 25 °C

-

-0.7

-1.2

V

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