PMEG10020AELP_15 datasheet(6/15 Pages) PHILIPS

Part #	PMEG10020AELP

Description	100 V, 2 A low leakage current Schottky barrier rectifier

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NXP Semiconductors

PMEG10020AELP

100 V, 2 A low leakage current Schottky barrier rectifier

PMEG10020AELP

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Product data sheet

7 May 2015

6 / 15

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)R

reverse breakdown

voltage

IR = 1 mA; Tj = 25 °C; tp = 300 µs;

δ = 0.02

100

-

V

IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

470

520

mV

IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

580

630

mV

IF = 0.7 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

610

670

mV

IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

650

710

mV

IF = 1.6 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

690

750

mV

IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

710

770

mV

VF

forward voltage

IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 125 °C

-

575

650

mV

VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

10

-

nA

VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

25

-

nA

VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

70

300

nA

IR

reverse current

VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 125 °C

-

120

1000

µA

VR = 1 V; f = 1 MHz; Tj = 25 °C

-

135

-

pF

VR = 4 V; f = 1 MHz; Tj = 25 °C

-

80

-

pF

Cd

diode capacitance

VR = 10 V; f = 1 MHz; Tj = 25 °C

-

50

-

pF

trr

reverse recovery time

IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;

Tj = 25 °C

-

5

-

ns

VFRM

peak forward recovery

voltage

IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C

-

610

-

mV

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