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CHA2292 Datasheet(PDF) 2 Page - United Monolithic Semiconductors

Part # CHA2292
Description  16-24GHz Low Noise, Variable Gain Amplifier
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Manufacturer  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHA2292 Datasheet(HTML) 2 Page - United Monolithic Semiconductors

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CHA2292
16-24GHz LNA VGA
Ref. DSCHA22927150 - 20 May 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2, 3, 4=5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
16
24
GHz
G
Small signal gain (1)
24
26
dB
∆G
Small signal gain flatness (1)
±1
dB
Is
Reverse isolation (1)
50
dB
NF
Noise figure with Vc=1.2V
2.8
3.5
dB
Gctrl
Gain control range versus Vc
15
20
dB
P1dB
Output power at 1dB compression with Vc=1.2V
11
dBm
VSWRin
Input VSWR (1)
2.5:1
3.5:1
VSWRout
Output VSWR (1)
2.0:1
3:1
Vd
DC voltage
V5= Vd2,3,4
Vc
-1.5
5
[-0.7, +1.2]
+1.3
V
V
Id1
Bias current (2) with Vc=1.2V
35
mA
Id
Bias current total (3) with Vc=1.2V
160
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg2, 3, 4 voltage for a total drain current around 160mA.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.5
V
Vc
Control bias voltage
1.5
V
Id
Drain bias current
250
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.


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