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CHA2292 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA2292 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
2 / 6 page CHA2292 16-24GHz LNA VGA Ref. DSCHA22927150 - 20 May 07 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, V5=Vd2, 3, 4=5V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 24 GHz G Small signal gain (1) 24 26 dB ∆G Small signal gain flatness (1) ±1 dB Is Reverse isolation (1) 50 dB NF Noise figure with Vc=1.2V 2.8 3.5 dB Gctrl Gain control range versus Vc 15 20 dB P1dB Output power at 1dB compression with Vc=1.2V 11 dBm VSWRin Input VSWR (1) 2.5:1 3.5:1 VSWRout Output VSWR (1) 2.0:1 3:1 Vd DC voltage V5= Vd2,3,4 Vc -1.5 5 [-0.7, +1.2] +1.3 V V Id1 Bias current (2) with Vc=1.2V 35 mA Id Bias current total (3) with Vc=1.2V 160 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage. (3) With Id1=35mA, adjust Vg2, 3, 4 voltage for a total drain current around 160mA. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 5.5 V Vc Control bias voltage 1.5 V Id Drain bias current 250 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. |
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Similar Description - CHA2292 |
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