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PMEG3020CPAS Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMEG3020CPAS Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page NXP Semiconductors PMEG3020CPAS 30 V, 2 A low VF dual MEGA Schottky barrier rectifier PMEG3020CPAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 20 January 2015 7 / 15 VR (V) 0 30 20 10 006aac420 100 200 300 Cd (pF) 0 f = 1 MHz; Tamb = 25 °C Fig. 6. Diode capacitance as a function of reverse voltage; typical values IF(AV) (A) 0.0 3.0 2.0 1.0 006aac421 1.4 PF(AV) (W) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 (1) (2) (3) (4) Tj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. Average forward power dissipation as a function of average forward current; typical values VR (V) 0 20 15 5 10 006aac422 1.0 2.0 3.0 PR(AV) (W) 0.0 (1) (2) (3) (4) Tj = 125 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 8. Average reverse power dissipation as a function of reverse voltage; typical values VR (V) 0 30 20 10 aaa-015084 0.2 0.4 0.6 PR(AV) (W) 0.0 (1) (2) (3) (4) Tj = 85 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 9. Average reverse power dissipation as a function of reverse voltage; typical values |
Similar Part No. - PMEG3020CPAS_15 |
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Similar Description - PMEG3020CPAS_15 |
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