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PESD18VF1BL Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD18VF1BL Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page PESD18VF1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 2 September 2013 3 of 11 NXP Semiconductors PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode 9. Characteristics [1] Measured from pin 1 to pin 2. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.1-2008. Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( μs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 μs 50 % IPP; 20 μs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage --18 V IRM reverse leakage current VR = 18 V - 1 30 nA VCL clamping voltage IPP =1A; tp = 8/20 µs; IEC 61000-4-5; IEC 61643-321 [1] --17 V VBR breakdown voltage IR = 10 mA 192224V Cd diode capacitance f = 1 MHz; VR = 0 V 0.28 0.35 0.5 pF Rdyn dynamic resistance IR = 10 A [2] -0.8 - Ω |
Similar Part No. - PESD18VF1BL_15 |
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