PESD18VF1BL_15 datasheet(3/11 Pages) PHILIPS

Part #	PESD18VF1BL

Description	Ultra low capacitance bidirectional ESD protection diode

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Manufacturer	PHILIPS [NXP Semiconductors]

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PESD18VF1BL

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Product data sheet

Rev. 1 — 2 September 2013

3 of 11

NXP Semiconductors

PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

9. Characteristics

[1]

Measured from pin 1 to pin 2.

[2]

Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.1-2008.

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 and IEC 61643-321

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (

μs)

040

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.7 ns to 1 ns

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

--18

V

IRM

reverse leakage

current

VR = 18 V

-

1

30

nA

VCL

clamping voltage

IPP =1A; tp = 8/20 µs; IEC 61000-4-5;

IEC 61643-321

[1]

--17

V

VBR

breakdown voltage

IR = 10 mA

192224V

Cd

diode capacitance

f = 1 MHz; VR = 0 V

0.28

0.35

0.5

pF

Rdyn

dynamic resistance

IR = 10 A

[2]

-0.8

-

Ω

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PESD18VF1BL Datasheet(PDF) 3 Page - NXP Semiconductors

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