PESD5V0V2BMB_15 datasheet(4/12 Pages) PHILIPS

Part #	PESD5V0V2BMB

Description	Very low capacitance bidirectional ESD protection diodes

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PESD5V0V2BMB

Very low capacitance bidirectional ESD protection diodes

PESD5V0V2BMB

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Product data sheet

17 August 2015

4 / 12

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

IR = 5 mA; Tamb = 25 °C

[1]

5.5

6.8

7.8

V

Cd

diode capacitance

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

18

20

pF

IPP = 1 A; Tamb = 25 °C; tp = 8/20 μs

[1][2]

-

8

9.5

V

VCL

clamping voltage

IPPM = 9 A; Tamb = 25 °C; tp = 8/20 μs

[1][2]

-

11

12.5

V

Rdyn

dynamic resistance

IR = 10 A; Tamb = 25 °C

[1][3]

-

0.15

-

Ω

[1] Measured from pin 1 or 2 to pin 3.

[2] According to IEC 61000-4-5 and IEC 61643-321.

[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD

STM5.5.1-2008.

VR (V)

-5

5

3

-1

1

-3

aaa-019002

8

12

4

16

20

Cd

(pF)

0

f = 1 MHz; Tamb = 25 °C

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

006aaa676

- VCL - VBR - VRWM

VCL

VBR

VRWM

- IRM

IRM

- IR

IR

- IPP

IPP

-

+

Fig. 5. V-I characteristics for a bidirectional ESD

protection diode

VCL (V)

0

12

8

4

aaa-019004

10

20

30

I

(A)

0

Rdyn: 0.15 Ω

tp = 100 ns; Transmission Line Pulse (TLP)

Fig. 6. Dynamic resistance

VCL (V)

-12

0

-4

-8

aaa-019006

-20

-10

0

I

(A)

-30

Rdyn: 0.15 Ω

tp = 100 ns; Transmission Line Pulse (TLP)

Fig. 7. Dynamic resistance

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