NXP Semiconductors

NX7002BKW

60 V, single N-channel Trench MOSFET

NX7002BKW

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Product data sheet

20 March 2015

3 / 15

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

60

V

gate-source voltage

-20

20

V

-

330

mA

[1]

-

240

mA

drain current

[1]

-

150

mA

peak drain current

-

0.8

A

[2]

-

265

mW

[1]

-

322

mW

total power dissipation

-

1449

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

200

mA

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 1. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 2. Normalized continuous drain current as a

function of junction temperature