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NX7002AK Datasheet(PDF) 7 Page - NXP Semiconductors |
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NX7002AK Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 16 page NXP Semiconductors NX7002AK 60 V, single N-channel Trench MOSFET NX7002AK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 6 August 2015 7 / 16 VDS (V) 0 4 3 1 2 017aaa469 0.10 0.05 0.15 0.20 ID (A) 0 10 V 2.3 V VGS = 2.0 V 2.5 V 3.0 V 4.5 V Tj = 25 °C Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa470 VGS (V) 0 3 2 1 10-4 10-5 10-3 ID (A) 10-6 (1) (2) (3) Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig. 7. Sub-threshold drain current as a function of gate-source voltage ID (A) 0 0.20 0.15 0.05 0.10 017aaa471 4 6 2 8 10 RDSon (Ω) 0 3.0 V 4.5 V 10.0 V 2.0 V 2.5 V 2.3 V Tj = 25 °C Fig. 8. Drain-source on-state resistance as a function of drain current; typical values VGS (V) 0 10 8 4 6 2 017aaa472 4 8 12 RDSon 0 (1) (2) ID = 0.2 A (1) Tj = 150 °C (2) Tj = 25 °C Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values |
Similar Part No. - NX7002AK_15 |
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Similar Description - NX7002AK_15 |
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