NXP Semiconductors

NX7002AK

60 V, single N-channel Trench MOSFET

NX7002AK

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2015. All rights reserved

Product data sheet

6 August 2015

7 / 16

0

4

3

1

2

017aaa469

0.10

0.05

0.15

0.20

(A)

0

10 V

2.3 V

2.5 V

3.0 V

4.5 V

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa470

0

3

2

1

(A)

(1)

(2)

(3)

(1) minimum values

(2) typical values

(3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

0

0.20

0.15

0.05

0.10

017aaa471

4

6

2

8

10

(Ω)

0

3.0 V

4.5 V

10.0 V

2.0 V

2.5 V

2.3 V

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

0

10

8

4

6

2

017aaa472

4

8

12

0

(1)

(2)

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values