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CHR1080A98F Datasheet(PDF) 3 Page - United Monolithic Semiconductors |
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CHR1080A98F Datasheet(HTML) 3 Page - United Monolithic Semiconductors |
3 / 12 page 71-86GHz Down-converter CHR1080a98F Ref. : DSCHR1080a5093 - 03 Apr 15 3/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4V V Idt Drain bias current 240 mA Vg Gate bias voltage -3.0 to -1.4 V Pin_LO Maximum LO peak input power overdrive (2) +10 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Pad name Pad N o Parameter Typical Values Unit GRF 6 LNA DC gate voltage (1) -2 V DRF 7 LNA DC drain voltage (90mA) 3.5 V GX 8 Mixer DC gate voltage -2 V DLO 10 LO Buffer DC drain voltage (85mA) 3.5 V GLO 12 LO Buffer DC gate voltage -2.2 V 5, 9, 11 Not connected (1) LNA gate voltage could be adjusted between -3.0V and -1.4V to perform gain control |
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