CHA7115-99F

RoHS COMPLIANT

Ref : DSCHA71151069 - 10 Mar 11

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

22

24

26

28

30

32

34

36

38

40

42

44

8

8.5

9

9.5

10

10.5

11

11.5

12

Frequency (GHz)

PAE @ 4dBc

Pout @ 4dBc

Linear Gain

Pulse : 25µs 10%

X-band High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA7115 is a monolithic three-stage

GaAs high power amplifier designed for

X-band applications.

The HPA provides typically 8W output power

associated to 36% power added efficiency at

4dBcomp

and

a

high

robustness

on

mismatch load.

This device is manufactured using 0.25µm

Power pHEMT process, including, via holes

through the substrate and air bridges.

It is available in chip form.

Main Features

 0.25µm Power pHEMT Technology

 Frequency band: 8.5

– 11.5GHz

 Output power : 39dBm @ 4dBcomp

 High linear gain: > 27dB

 High PAE : 37% @ 4dBcomp

 Quiescent bias point: Vd=8V, Id=2.2A

Main Characteristics

Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

8.5

11.5

GHz

PAE_4dB

Power added efficiency @4dBcomp @ 20°C

37

%

P_4dB

Output power @ 4dBcomp @ 20°C

39

dBm

G

Small signal gain @ 20°C

27.5

dB

ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!

IN

OUT

Vg3 Vd3

Vd2

Vd1

Vg3 Vd3

Vg2 Vd2

Vg1

IN

OUT

Vg3 Vd3

Vd2

Vd1

Vg3 Vd3

Vg2 Vd2

Vg1