RDHB710SE20A2SX datasheet(2/7 Pages) IRF

Part #	RDHB710SE20A2SX

Description	Hermetically Sealed Package

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Manufacturer	IRF [International Rectifier]

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RDHB710SE20A2SX

Dual, 200V, 10A

For Notes, please refer to page 3

Pre-Irradiation

General Characteristics per Channel @ -55°C

£ TC £ +125°C (unless otherwise specified)

Electrical Characteristics per Channel @ -55°C

£ TC £ +125°C (unless otherwise specified)

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

1

VIN = 3.3V

0.15

2

VDD = 5.0V, IO= 10A

0.29

1

VIN = 0.1V, VS = 200V

25

2

VIN = 0.1V, VS = 150V

250

VDD = 5.0V, IO= 10A

10

15

VDD = 10V, IO= 10A 1, 7

25

1

1.0

2, 3

3.0

VIN = 3.3V, VDD = 5.0V, VS = 50V

RL = 5Ω, PW = 50ms

VIN = 0.1V, VDD = 5.0V, VS = 50V

RL = 5Ω, PW = 50ms

VIN = 3.3V, VDD = 5.0V, VS = 50V

RL = 5Ω, PW = 50ms

VIN = 0.1V, VDD = 5.0V, VS = 50V

RL = 5Ω, PW = 50ms

Output On-Resistance

RDS(ON)

Ω

Output Leakage Current

IO

µA

mA

Input Buffer Current

VIN = 3.3V

IIN

1, 2, 3

ton

Input Supply Current

IDD

1.5

ms

Turn-Off Delay 6

1, 2, 3

toff

10

Rise Time 2, 6

Turn-On Delay 6

tr

1, 2, 3

µA

0.5

Fall Time 2, 6

1, 2, 3

tf

2.5

1, 2, 3

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

Input Buffer Threshold Voltage 1, 3

VDD = 5.0V, IO = 10A

VIN(TH)

3.0

V

VI-O = 1.0KVdc, dwell = 5.0s

TC = 25°C

VIN = 0.1V, f = 1.0MHz,

VS = 25V, TC = 25°C

Thermal Resistance 1

VIN = 3.3V, VDD = 5.0V 1, 4

RTHJC

1.4

°C/W

MTBF (Per Channel)

MIL-HDBK-217F, SF@Tc= 25°C

6.0

MHrs

Weight

W25

gms

pF

210

Output Capacitance 1

COSS

µA

Input-to-Output Leakage Current

1

II-O

1.0

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