BLL8H1214L-500_15 datasheet(11/20 Pages) PHILIPS

Part #	BLL8H1214L-500

Description	LDMOS L-band radar power transistor

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BLL8H1214L-500_1214LS-500

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Product data sheet

Rev. 2 — 9 February 2015

11 of 20

NXP Semiconductors

BLL8H1214L(S)-500

LDMOS L-band radar power transistor

7.4.6 Performance curves measured with

 =20%, t

p = 500 s and f = 1300 MHz

VDS = 50 V; IDq = 150 mA.

(1) Th = 40 C

(2) Th = +25 C

(3) Th = +65 C

VDS = 50 V; IDq = 150 mA.

(1) Th = 40 C

(2) Th = +25 C

(3) Th = +65 C

Fig 23. Output power as a function of input power;

typical values

Fig 24. Power gain as a function of output power;

typical values

Pi (W)

025

20

10

15

5

001aal699

700

PL

(W)

500

300

100

0

200

400

600

(1)

(2)

(3)

PL (W)

700

500

100

600

400

200

0

300

001aal700

8

4

16

20

Gp

(dB)

0

12

(1)

(2)

(3)

VDS = 50 V; IDq = 150 mA.

(1) Th = 40 C

(2) Th = +25 C

(3) Th = +65 C

Fig 25. Drain efficiency as a function of output power; typical values

PL (W)

0

200

400

600

700

500

300

100

001aal701

20

40

60

ηD

(%)

0

(1)

(2)

(3)

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BLL8H1214L-500 Datasheet(PDF) 11 Page - NXP Semiconductors

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