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INA283 Datasheet(PDF) 4 Page - Texas Instruments |
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INA283 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 36 page INA282, INA283, INA284, INA285, INA286 SBOS485C – NOVEMBER 2009 – REVISED MAY 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, V+ 18 V Differential (V+IN) – (V–IN) (3) –5 +5 V Analog inputs, V+IN, V–IN (2) Common-mode –14 +80 V REF1, REF2, OUT GND – 0.3 (V+) + 0.3 V Input current into any pin 5 mA Junction temperature 150 °C Storage temperature range, Tstg –65 +150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) V+IN and V–IN are the voltages at the +IN and –IN pins, respectively. (3) Input voltages must not exceed common-mode rating. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCM Common-mode input voltage 12 V V+ Operating supply voltage 5 V TA Operating free-air temperature –40 +125 °C 6.4 Thermal Information INA28x THERMAL METRIC(1) D (SOIC) DGK (VSSOP) UNIT 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 134.9 164.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 72.9 56.4 °C/W RθJB Junction-to-board thermal resistance 61.3 85.0 °C/W ψJT Junction-to-top characterization parameter 18.9 6.5 °C/W ψJB Junction-to-board characterization parameter 54.3 83.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: INA282 INA283 INA284 INA285 INA286 |
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