BUK9875-100A_15 datasheet(5/12 Pages) PHILIPS

Part #	BUK9875-100A

Description	N-channel TrenchMOS logic level FET

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NXP Semiconductors

BUK9875-100A

N-channel TrenchMOS logic level FET

BUK9875-100A

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Product data sheet

19 March 2014

5 / 12

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ID = 0.25 mA; VGS = 0 V; Tj = 25 °C

100

-

V

V(BR)DSS

drain-source

breakdown voltage

ID = 0.25 mA; VGS = 0 V; Tj = -55 °C

89

-

V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 11

1

1.5

2

V

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 11

-

2.3

V

VGS(th)

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 150 °C;

Fig. 11

0.6

-

V

VDS = 100 V; VGS = 0 V; Tj = 25 °C

-

0.05

10

µA

IDSS

drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 150 °C

-

500

µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

IGSS

gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 5 V; ID = 8 A; Tj = 150 °C;

Fig. 12; Fig. 13

-

162

mΩ

VGS = 4.5 V; ID = 8 A; Tj = 25 °C

-

84

mΩ

VGS = 10 V; ID = 8 A; Tj = 25 °C

-

62

72

mΩ

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 12;

Fig. 13

-

64

75

mΩ

Dynamic characteristics

Ciss

input capacitance

-

1270

1690

pF

Coss

output capacitance

-

140

167

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 14

-

90

124

pF

td(on)

turn-on delay time

-

13

-

ns

tr

rise time

-

120

-

ns

td(off)

turn-off delay time

-

58

-

ns

tf

fall time

VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;

RG(ext) = 10 Ω; Tj = 25 °C

-

57

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 15

-

0.85

1.2

V

trr

reverse recovery time

-

63

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs;

VGS = -10 V; VDS = 30 V; Tj = 25 °C

-

220

-

nC

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