BUK963R2-40B_15 datasheet(1/13 Pages) PHILIPS

Part #	BUK963R2-40B

Description	N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BUK963R2-40B

N-channel TrenchMOS logic level FET

13 March 2014

Product data sheet

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1. General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

2. Features and benefits

• AEC Q101 compliant

• Low conduction losses due to low on-state resistance

• Suitable for logic level gate drive sources

• Suitable for thermally demanding environments due to 175 °C rating

3. Applications

• 12 V loads

• Automotive systems

• General purpose power switching

• Motors, lamps and solenoids

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

40

V

ID

drain current

VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3

[1]

-

100

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 1

-

300

W

Static characteristics

VGS = 10 V; ID = 25 A; Tj = 25 °C

-

2.4

2.8

mΩ

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 25 A; Tj = 25 °C;

Fig. 11; Fig. 12

-

2.7

3.2

mΩ

Dynamic characteristics

QGD

gate-drain charge

VGS = 5 V; ID = 25 A; VDS = 32 V;

Tj = 25 °C; Fig. 13

-

37

-

nC

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