NXP Semiconductors

BUK9Y153-100E

N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56

BUK9Y153-100E

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Product data sheet

27 June 2014

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode

source current

-

9.4

A

peak source current

-

38

A

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

Fig. 4

[3][4]

-

9.5

mJ

[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm

[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[4] Refer to application note AN10273 for further information.

0

200

150

50

100

03aa16

40

80

120

(%)

0

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

003aai760

0

30

60

90

120

150

180

0

2

4

6

8

10

(A)

(A)

Fig. 2. Continuous drain current as a function of

mounting base temperature