BUK7Y08-40B

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Product data sheet

Rev. 03 — 7 April 2010

7 of 14

NXP Semiconductors

BUK7Y08-40B

N-channel TrenchMOS standard level FET

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 9.

Forward transconductance as a function of

drain current; typical values.

003aad499

0

20

40

60

80

01

23

45

(A)

5.8

5.6

5.2

4.8

4.5

20

10

6.1

003aad500

0

6

12

18

24

30

0

2040

6080

(m

Ω)

6.1

5.6

5.8

10

20

5.2

003aad551

0

20

40

60

80

02

46

8

(A)

°C

25

°C

003aad501

20

32

44

56

0

2040

6080

(S )