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BUK7Y08-40B Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7Y08-40B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page BUK7Y08-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 7 of 14 NXP Semiconductors BUK7Y08-40B N-channel TrenchMOS standard level FET Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 9. Forward transconductance as a function of drain current; typical values. 003aad499 0 20 40 60 80 01 23 45 VDS (V) ID (A) 5.8 5.6 5.2 4.8 4.5 20 10 6.1 VGS (V) = 003aad500 0 6 12 18 24 30 0 2040 6080 ID (A) RDSon (m Ω) 6.1 5.6 5.8 10 20 5.2 VGS (V) = 003aad551 0 20 40 60 80 02 46 8 VGS (V) ID (A) T j = 175 °C 25 °C 003aad501 20 32 44 56 0 2040 6080 ID (A) gfs (S ) |
Similar Part No. - BUK7Y08-40B_15 |
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Similar Description - BUK7Y08-40B_15 |
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