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2SC4139 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4139 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC4139 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 0.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=8A ; VCE=4V 10 30 fT Transition frequency IE=-1.5A ; VCE=12V 10 MHz COB Collector output capacitance f=1MHz ; VCB=10V 85 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 3.0 μs tf Fall time IC=8A;IB1=0.8A; IB2=-1.6A;RL=25Ω VCC=200V 0.5 μs |
Similar Part No. - 2SC4139_15 |
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Similar Description - 2SC4139_15 |
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