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MAX6820 Datasheet(PDF) 5 Page - Maxim Integrated Products |
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MAX6820 Datasheet(HTML) 5 Page - Maxim Integrated Products |
5 / 8 page Detailed Description Many dual-supply processors or multivoltage boards require one power supply to rise to the proper operat- ing voltage before another supply is applied. Improper sequencing can lead to chip latchup, incorrect device initiation, or long-term reliability degradation. If the vari- ous supply voltages are not locally generated (coming from a main system bus, an externally purchased silver box, or a nonsequenced power management chip), power-on and power-off sequencing can be difficult to control or predict. Supply loading can affect turn- on/turn-off times from board to board. The MAX6819/MAX6820 provide proper local voltage sequencing in multisupply systems. The sequencers use an external N-channel MOSFET to switch the sec- ondary supply to the load only when the primary supply is above a desired operating voltage threshold. The N- channel MOSFET operates in a default off mode when the primary supply is below the desired threshold or if neither supply exceeds the sequencer’s UVLO level. When the primary supply voltage is above the set threshold, the external MOSFET is driven on. An inter- nal charge pump fully enhances the external MOSFET by providing a gate-to-source voltage (VGS) of +5.5V (typ). The charge pump fully enhances the MOSFET to yield a low drain-to-source impedance (RDS(ON)) for reduced switch voltage drop. The MOSFET is never dri- ven on unless the sequencer can provide a minimum VGS enhancement, ensuring that the switch MOSFET never operates in its higher impedance linear range. Either supply may act as the primary source, regard- less of the voltage level, provided that VCC1 or VCC2 is greater than 2.125V (Figure 1 and Figure 2). SOT23 Power-Supply Sequencers _______________________________________________________________________________________ 5 PIN MAX6819 MAX6820 NAME FUNCTION 11 VCC1 Supply Voltage 1. Either VCC1 or VCC2 must be greater than the UVLO to enable external MOSFET drive. 2 2 GND Ground 3 3 SETV Sequence Threshold Set. Connect to an external resistor-divider network to set the VCC1 threshold that enables GATE turn-on. The internal reference is 0.618V. 4 — EN Active-High Enable. GATE drive is enabled tDELAY after EN is driven high. GATE drive is immediately disabled when EN is driven low. Connect to the higher of VCC1 and VCC2 if not used. — 4 SETD GATE Delay Set Input. Connect an external capacitor from SETD to GND to adjust the delay from SETV > VTH to GATE turn-on. tDELAY (s) = 2.484 x 106 x CSET (F). 5 5 GATE GATE Drive Output. GATE drives an external N-channel MOSFET to connect VCC2 to the load. GATE drive enables tDELAY after SETV exceeds VTH and ENABLE is driven high. GATE drive is immediately disabled when SETV drops below VTH or ENABLE is driven low. When enabled, an internal charge pump drives GATE to VCC2 + 5.5V to fully enhance the external N-channel MOSFET. 66 VCC2 Supply Voltage 2. Either VCC1 or VCC2 must be greater than the UVLO to enable external MOSFET drive. Pin Description SETV ( ) FOR MAX6820 ONLY VCC2 VCC2 OUT 0.62V VCC1 GND SEQUENCE DELAY/ LOGIC GATE EN (SETD) GATE DRIVE CHARGE PUMP UVLO Figure 1. Functional Diagram |
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