US1652

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R129-002.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain Voltage (Off State)

-0.3~650

V

-0.3~33

V

-0.3~33

V

10

mA

CS Input Voltage

-0.3~7

V

INV Input Voltage

Vinv

-0.3~7

V

Operating Junction Temperature

-20~150

°C

Storage Temperature

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

Standby Current

5

10

μA

Operation Current

Operation Supply Current

1.0

2.0

mA

7.5

8.5

9.5

V

14.0

15

16.0

V

Over Voltage Protection Voltage

Gate Clock is Off

28.5

30.0

31.5

V

33

V

Current Sense Input Section

LEB Time

1.2

μs

VTH_OC_test

780

820

860

mV

Propagation Delay

300

ns

Input Impedance

50

KΩ

Soft Start Time

T_ss

4

ms

CV Section

Normal Mode Frequency

45

50

55

KHz

Burst Mode Base Frequency

Freq_Burst

22

KHz

Frequency Shuffling Range

△

±4

%

CC Section

Minimum frequency

12

KHz

Oscillation Frequency

Maximum frequency

50

KHz

Error Amplifier section

Reference Voltage for EA

1.21

1.25

1.29

V

DC Gain of the EA

Gdc

50

dB

Unity Gain Bandwidth

37.5

kHz

Power MOSFET Section

Mos Drain-Source Breakdown

Voltage

650

V

Static Drain to Source On

Resistance

6

Ω

OTP SECTION

Threshold Temperature of OTP

(Note)

+150

°C