88NXXG-AD4-R datasheet(5/8 Pages) UTC

Part #	88NXXG-AD4-R

Description	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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5 / 8 page

88NXX

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

5 of 8

www.unisonic.com.tw

QW-R502-368.G



ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified)

Detection Voltage: 2.1V

PARAMETER

SYMBOL

TEST

CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Detection Voltage (Note 1)

-VDET

1

-VDET(S)

×0.98

-VDET(S)

×1.02

V

Hysteresis Width

VHYS

1

-VDET

×0.02

-VDET

×0.05

-VDET

×0.08

V

Current Consumption

ISS

2

VDD=3.5 V

5

μA

Operating Voltage

VDD

1

0.95

10.0

V

Output Current

IOUT

3

Output transistor

Nch, VDS=0.5V, VDD=1.2V

0.59

1.36

mA

Leakage Current

ILEAK

3

Output transistor

Nch, VDS=10V, VDD=10V

0.1

μA

Detection Voltage Temperature

Coefficient (Note 2)

DET

V

-

×

Ta

∆

V

-

∆

1

TA=-40°C ~ +85°C

±100

±350 ppm/°C

Delay Time

tD

4

VDD=3.5V, CD=4.7 nF

20

42

ms

Detection Voltage: 2.4V

PARAMETER

SYMBOL

TEST

CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Detection Voltage (Note 1)

-VDET

1

-VDET(S)

×0.98

-VDET(S)

×1.02

V

Hysteresis Width

VHYS

1

-VDET

×0.02

-VDET

×0.05

-VDET

×0.08

V

Current Consumption

ISS

2

VDD=3.5V

5

μA

Operating Voltage

VDD

1

0.95

10.0

V

Output Current

IOUT

3

Output transistor

Nch, VDS=0.5V, VDD=1.2V

0.59

1.36

mA

Leakage Current

ILEAK

3

Output transistor

Nch, VDS=10V, VDD=10V

0.1

μA

Detection Voltage Temperature

Coefficient (Note 2)

DET

V

-

×

Ta

∆

V

-

∆

1

TA=-40°C ~ +85°C

±100

±350 ppm/°C

Delay Time

tD

4

VDD=3.5V, CD=4.7 nF

20

42

ms

Detection Voltage: 2.7V

PARAMETER

SYMBOL

TEST

CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Detection Voltage (Note 1)

-VDET

1

-VDET(S)

×0.98

-VDET(S)

×1.02

V

Hysteresis Width

VHYS

1

-VDET

×0.02

-VDET

×0.05

-VDET

×0.08

V

Current Consumption

ISS

2

VDD=4.5V

5

μA

Operating Voltage

VDD

1

0.95

10.0

V

Output Current

IOUT

3

Output transistor

Nch, VDS=0.5V, VDD=2.4V

2.88

4.98

mA

Leakage Current

ILEAK

3

Output transistor

Nch, VDS=10V, VDD=10V

0.1

μA

Detection Voltage Temperature

Coefficient (Note 2)

DET

V

-

×

Ta

∆

V

-

∆

1

TA=-40°C ~ +85°C

±100

±350 ppm/°C

Delay Time

tD

4

VDD=4.5V, CD=4.7 nF

12

34

ms

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