NXP Semiconductors

BUK7K18-40E

Dual N-channel 40 V, 19 mΩ standard level MOSFET

BUK7K18-40E

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Product data sheet

10 December 2013

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode FET1 and FET2

source current

-

24.2

A

peak source current

-

127

A

Avalanche Ruggedness FET1 and FET2

non-repetitive drain-source

avalanche energy

[1][2]

-

26.3

mJ

[1] Refer to application note AN10273 for further information

[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

003aak253

0

25

50

75

100 125 150 175 200

0

10

20

30

40

(A)

(A)

Fig. 1. Continuous drain current as a function of

mounting base temperature

0

200

150

50

100

03aa16

40

80

120

(%)

0

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature