BLM6G22-30_BLM6G22-30G

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Product data sheet

Rev. 4 — 7 March 2011

3 of 14

NXP Semiconductors

BLM6G22-30; BLM6G22-30G

W-CDMA 2100 MHz to 2200 MHz power MMIC

4.

Block diagram

5.

Limiting values

6.

Thermal characteristics

[1]

Thermal resistance is determined under specific RF operating conditions.

Fig 2.

Block diagram of BLM6G22-30 and BLM6G22-30G

001aah621

2

14

6

RF_INPUT

9

10

TEMPERATURE

COMPENSATED BIAS

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+13

V

first stage drain current

-

3

A

second stage drain current

-

9

A

storage temperature

−65

+150

°C

junction temperature

-

200

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Value

Unit

first stage thermal resistance

from junction to case

2-carrier W-CDMA

[1] 3.9

K/W

second stage thermal resistance

from junction to case

2-carrier W-CDMA

[1] 2.1

K/W