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BUK7C08-55AITE Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK7C08-55AITE Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page BUK7C08-55AITE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 17 February 2009 4 of 15 NXP Semiconductors BUK7C08-55AITE N-channel TrenchPLUS standard level FET Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Tmb (°C) 0 200 150 50 100 03na19 40 80 120 Pder (%) 0 03no05 0 50 100 150 0 50 100 150 200 Tj (°C) ID (A) Capped at 75A due to package 03nh48 1 10 102 103 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms RDSon = VDS / ID 1 ms tp = 10 µs 100 µs Capped at 75 A due to package |
Similar Part No. - BUK7C08-55AITE_15 |
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Similar Description - BUK7C08-55AITE_15 |
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