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BUK7C06-40AITE Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7C06-40AITE Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BUK7C06-40AITE_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 16 February 2009 3 of 14 NXP Semiconductors BUK7C06-40AITE N-channel TrenchPLUS standard level FET 4. Limiting values [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS =20kΩ -40 V VGS gate-source voltage -20 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 2; see Figure 3 [1] -155 A [2] -75 A Tmb =100 °C; VGS = 10 V; see Figure 2 [2] -75 A IDM peak drain current Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3 -620 A Ptot total power dissipation Tmb =25°C; see Figure 1 -272 W IGS(CL) gate-source clamping current continuous - 10 mA pulsed; tp =5ms; δ =0.01 - 50 mA Visol(FET-TS D) FET to temperature sense diode isolation voltage -100 100 V Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25°C [1] -155 A [2] -75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb =25°C - 620 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 40 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped -1.46 J Electrostatic discharge Vesd electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 k Ω -6 kV |
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