BUK7C06-40AITE_15 datasheet(3/14 Pages) PHILIPS

Part #	BUK7C06-40AITE

Description	N-channel TrenchPLUS standard level FET

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

3 / 14 page

BUK7C06-40AITE_5

Product data sheet

Rev. 05 — 16 February 2009

3 of 14

NXP Semiconductors

BUK7C06-40AITE

N-channel TrenchPLUS standard level FET

4.

Limiting values

[1]

Current is limited by power dissipation chip rating.

[2]

Continuous current is limited by package.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

40

V

VDGR

drain-gate voltage

RGS =20kΩ

-40

V

VGS

gate-source voltage

-20

20

V

ID

drain current

Tmb =25°C; VGS =10V; see Figure 2; see Figure 3 [1]

-155

A

[2]

-75

A

Tmb =100 °C; VGS = 10 V; see Figure 2

[2]

-75

A

IDM

peak drain current

Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3

-620

A

Ptot

total power dissipation

Tmb =25°C; see Figure 1

-272

W

IGS(CL)

gate-source clamping

current

continuous

-

10

mA

pulsed; tp =5ms; δ =0.01

-

50

mA

Visol(FET-TS

D)

FET to temperature

sense diode isolation

voltage

-100

100

V

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Source-drain diode

IS

source current

Tmb =25°C

[1]

-155

A

[2]

-75

A

ISM

peak source current

tp ≤ 10 µs; pulsed; Tmb =25°C

-

620

A

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

ID =75A; Vsup ≤ 40 V; RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

-1.46

J

Electrostatic discharge

Vesd

electrostatic discharge

voltage

HBM; C = 100 pF; R = 1.5 k

Ω

-6

kV

Similar Part No. - BUK7C06-40AITE_15

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK7C06-40AITE	109Kb / 14P	N-channel TrenchMOS standard level FET Rev. 04-23 June 2005
NXP Semiconductors	BUK7C06-40AITE	205Kb / 14P	N-channel TrenchPLUS standard level FET Rev. 05-16 February 2009
Nexperia B.V. All right...	BUK7C06-40AITE	319Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 05 - 16 February 2009

More results

Similar Description - BUK7C06-40AITE_15

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK7108-40AIE	209Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 03-19 February 2009
	BUK7909-75ATE	235Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 02-16 February 2009
	BUK7907-40ATC	240Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 02-10 February 2009
Nexperia B.V. All right...	BUK7905-40AIE	721Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 05 - 10 February 2009
	BUK7907-40ATC	738Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 02 - 10 February 2009
	BUK7908-40AIE	707Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 03 - 17 February 2009
	BUK7107-55ATE	345Kb / 16P	N-channel TrenchPLUS standard level FET Rev. 02 - 19 February 2009
	BUK7109-75AIE	339Kb / 14P	N-channel TrenchPLUS standard level FET Rev. 02 - 10 February 2009
	BUK7107-55AIE	338Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 02 - 10 February 2009
	BUK7C10-75AITE	738Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 03 - 17 February 2009
NXP Semiconductors	BUK7105-40ATE	223Kb / 15P	N-channel TrenchPLUS standard level FET Rev. 02-10 February 2009

More results

BUK7C06-40AITE Datasheet(PDF) 3 Page - NXP Semiconductors

BUK7C06-40AITE Datasheet(HTML) 3 Page - NXP Semiconductors

Similar Part No. - BUK7C06-40AITE_15

Similar Description - BUK7C06-40AITE_15

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL