BSS138PS

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Product data sheet

Rev. 1 — 2 November 2010

3 of 16

NXP Semiconductors

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

[1]

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

total power dissipation

°C

[2] -280

mW

[1] -320

mW

°C-

960

mW

Source-drain diode

source current

°C

[1] -290

mA

Per device

total power dissipation

°C

[2] -420

mW

junction temperature

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Fig 1.

Normalized total power dissipation as a

function of ambient temperature

Fig 2.

Normalized continuous drain current as a

function of ambient temperature

−75

175

125

25

75

−25

017aaa001

40

80

120

(%)

0

−75

175

125

25

75

−25

017aaa002

40

80

120

(%)

0

P

der

P

tot

P

tot 25

°C

()

------------------------

100 %

×

=

I

der

I

D

I

D25

°C

()

--------------------

100 %

×

=