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CSD87501L Datasheet(PDF) 1 Page - Texas Instruments |
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CSD87501L Datasheet(HTML) 1 Page - Texas Instruments |
1 / 12 page VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 D007 TC = 25°C, I S = 7 A TC = 125°C, I S = 7 A Qg - Gate Charge (nC) 0 4 8 12 16 20 24 28 32 0 1 2 3 4 5 6 7 8 9 10 D004 IS = 7 A, VS1S2 = 15 V Gate 2 Source 2 Gate 1 Source 1 S1 S1 G1 S1 S1 S2 S2 G2 S2 S2 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD87501L SLPS523A – FEBRUARY 2015 – REVISED APRIL 2015 CSD87501L 30 V Dual Common Drain N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Low On-Resistance TA = 25°C TYPICAL VALUE UNIT • Small Footprint of 3.37 × 1.47 mm VS1S2 Source-to-Source Voltage 30 V • Ultra-Low Profile – 0.2 mm High Qg Gate Charge Total (4.5 V) 15 nC Qgd Gate Charge Gate-to-Drain 6.0 nC • Pb-Free VGS = 4.5 V 9.3 m Ω • RoHS Compliant Source-to-Source On- RS1S2(on) Resistance VGS = 10 V 6.6 m Ω • Halogen Free VGS(th) Threshold Voltage 1.8 V • Gate ESD Protection . 2 Applications Ordering Information(1) • Battery Management Device Media Qty Package Ship CSD87501L 7-Inch Reel 3000 3.37 mm X 1.47 mm • Battery Protection Tape and Land Grid Array Reel CSD87501LT 7-Inch Reel 250 • USB Type-C /PD Package (1) For all available packages, see the orderable addendum at 3 Description the end of the data sheet. This 30 V, 6.6 m Ω, 3.37 mm × 1.47 mm LGA Dual Absolute Maximum Ratings NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its TA = 25°C VALUE UNIT small size and common drain configuration make the VS1S2 Source-to-Source Voltage 30 V device ideal for multi-cell battery pack applications VGS Gate-to-Source Voltage ±20 V and small handheld devices. IS Continuous Source Current(1) 14 A ISM Pulsed Source Current (2) 72 A Top View PD Power Dissipation 2.5 W V(ESD) Human Body Model (HBM) 2 kV Rating TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range (1) Typical RθJA = 50°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. . (2) Typical min Cu RθJA = 135°C/W, pulse duration ≤100 μs, duty cycle ≤1%. Configuration RS1S2(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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Similar Description - CSD87501L_15 |
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