BSS138AKA_15 datasheet(1/16 Pages) PHILIPS

Part #	BSS138AKA

Description	60 V, single N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BSS138AKA

60 V, single N-channel Trench MOSFET

29 April 2015

Product data sheet

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1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

• Very fast switching

• Trench MOSFET technology

• ESD protection

• Low threshold voltage

• AEC-Q101 qualified

3. Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

60

V

VGS

gate-source voltage

Tj = 25 °C

-20

-

20

V

ID

drain current

VGS = 10 V; Tamb = 25 °C

[1]

-

200

mA

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C

-

2.7

4.5

Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

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