0

2

4

6

8

10

0

10

20

30

40

50

60

70

D007

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

D004

S1

G1

D2

D2

D1

G2

S2

D1

Drain

Gate

Source

Drain

Gate

Source

Product

Folder

Sample &

Buy

Technical

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CSD85301Q2

SLPS521 – DECEMBER 2014

CSD85301Q2 20 V Dual N-Channel NexFET™ Power MOSFETs

.

1 Features

1

•

Low On-Resistance

Product Summary

•

Dual Independent MOSFETs

TYPICAL VALUE

UNIT

•

Space Saving SON 2 × 2 mm Plastic Package

Drain-to-Source Voltage

20

V

Gate Charge Total (4.5 V)

4.2

nC

•

Optimized for 5 V Gate Driver

Gate Charge Gate to Drain

1.0

nC

•

Avalanche Rated

65

m

Ω

•

Pb and Halogen Free

33

m

Ω

Drain-to-Source On Resistance

•

RoHS Compliant

25

m

Ω

23

m

Ω

2 Applications

Threshold Voltage

0.9

V

•

Point-of-Load Synchronous Buck Converter for

Applications in Networking, Telecom, and

.

Computing Systems

Ordering Information(1)

Device

Media

Qty

Package

Ship

•

Adaptor or USB Input Protection for Notebook

CSD85301Q2

7-Inch Reel

3000

PCs and Tablets

SON 2 x 2 mm

Tape and

Plastic Package

Reel

CSD85301Q2T

7-Inch Reel

250

•

Battery Protection

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

The CSD85301Q2 is a 20 V, 23 m

Ω N-Channel

Absolute Maximum Ratings

device with dual independent MOSFETs in a SON 2 x

VALUE

UNIT

2 mm plastic package. The two FETs were designed

Drain-to-Source Voltage

20

V

to be used in a half bridge configuration for

Gate-to-Source Voltage

±10

V

synchronous

buck

and

other

power

supply

applications. Additionally, this part can be used for

Continuous Drain Current (Package limited)

5.0

A

adaptor, USB input protection and battery charging

Pulsed Drain Current(1)

26

A

applications. The dual FETs feature low drain to

Power Dissipation(2)

2.3

W

source on-resistance that minimizes losses and offers

Operating Junction and

–55 to 150

°C

low

component

count

for

space

constrained

Storage Temperature Range

applications.

Avalanche Energy, single pulse

3.8

mJ

Top View and Circuit Image

≤1%.

inch thick FR4 PCB.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.