CSD25202W15_15 datasheet(5/15 Pages) TI

Part #	CSD25202W15

Description	CSD25202W15 20-V P-Channel NexFET Power MOSFET

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Manufacturer	TI [Texas Instruments]

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0.25

0.35

0.45

0.55

0.65

0.75

0.85

0.95

1.05

−75

−50

−25

0

25

50

75

100

125

150

175

TC - Case Temperature (ºC)

G001

10

14

18

22

26

30

34

38

42

46

50

0

1

2

3

4

5

6

− V

GS - Gate-to- Source Voltage (V)

TC = 25°C,I D = −2A

TC = 125°C,I D = −2A

G001

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0

1

2

3

4

5

6

Qg - Gate Charge (nC)

G001

0

100

200

300

400

500

600

700

800

900

1000

0

2

4

6

8

10

12

14

16

18

20

− V

DS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

0

2

4

6

8

10

12

14

16

18

20

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

− V

DS - Drain-to-Source Voltage (V)

VGS = −4.5V

VGS = −2.5 V

VGS = −1.8V

G001

0

5

10

15

20

25

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

− V

GS - Gate-to-Source Voltage (V)

TC = 125°C

TC = 25°C

TC = −55°C

G001

CSD25202W15

www.ti.com

SLPS508A – JUNE 2014 – REVISED JULY 2014

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

VDS = –5 V

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

ID = –2 A

VDS = –10 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = –250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

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