NXP Semiconductors

BSH111BK

55 V, N-channel Trench MOSFET

BSH111BK

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Product data sheet

26 November 2014

4 / 16

aaa-015680

10

1

1

(A)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

351

404

K/W

thermal resistance

from junction to

ambient

in free air

[2]

-

271

311

K/W

thermal resistance

from junction to solder

point

-

65

75

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.