EMB1412

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SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014

7 Detailed Description

7.1 Overview

The EMB1412 is a high speed, high peak current (7 A) single channel MOSFET driver. The high peak output

current of the EMB1412 will switch power MOSFETs on and off with short rise and fall times, thereby reducing

switching losses considerably. The EMB1412 includes both inverting and non-inverting inputs that give the user

flexibility to drive the MOSFET with either active low or active high logic signals. The driver output stage consists

of a compound structure with MOS and bipolar transistor operating in parallel to optimize current capability over a

wide output voltage and operating temperature range. The bipolar device provides high peak current at the

potential at the VEE pin.

The control inputs of the driver are high impedance CMOS buffers with TTL compatible threshold voltages. The

negative supply of the input buffer is connected to the input ground pin IN_REF. An internal level shifting circuit

connects the logic input buffers to the totem pole output drivers. The level shift circuit and separate input/output

ground pins provide the option of single supply or split supply configurations. When driving the MOSFET gates

voltage for a more robust and reliable off state. In split supply configuration, the IN_REF pin is connected to the

ground of the controller which drives the EMB1412 inputs. The VEE pin is connected to a negative bias supply

voltage exceeds 3 V.

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7

Product Folder Links: EMB1412