BLP10H605_15 datasheet(3/11 Pages) PHILIPS

Part #	BLP10H605

Description	Broadband LDMOS driver transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLP10H605

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Product data sheet

Rev. 3 — 2 October 2014

3 of 11

NXP Semiconductors

BLP10H605

Broadband LDMOS driver transistor

5.

Recommended operating conditions

See application note AN11520 for more details.

6.

Thermal characteristics

[1]

Rth(j-c) is measured under RF conditions

7.

Characteristics

Fig 1.

Recommended operating area; case temperature as a function of power

dissipation

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tcase =80 C; PL =5W

[1] 5.5

K/W

Table 6.

DC characteristics

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID =0.06mA

104

-

V

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 6 mA

1.25

1.7

2.25

V

VGSq

gate-source quiescent voltage VDS = 50 V; ID = 30 mA

1.35

1.78

2.25

V

IDSS

drain leakage current

VGS =0V; VDS = 50 V

--1.4

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

-0.95

-

A

IGSS

gate leakage current

VGS =11V; VDS = 0 V

--140

nA

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID = 210 mA

-4580

-

m



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