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IRLTS6342PBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRLTS6342PBF
Description  RoHS Compliant Containing no Lead, no Bromide and no Halogen
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLTS6342PBF Datasheet(HTML) 5 Page - International Rectifier

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IRLTS6342PbF
www.irf.com
5
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Time (sec)
0
4000
8000
12000
16000
0
10
20
30
40
50
ID, Drain Current (A)
0
10
20
30
40
50
60
70
Vgs = 2.5V
Vgs = 4.5V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
ID
TOP
0.9A
1.5A
BOTTOM 6.4A
1
2
3
4
5
6
7
8
9 10 11 12
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
40
45
ID = 8.0A
TJ = 25°C
TJ = 125°C


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