BLS7G2933S-150

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Product data sheet

Rev. 2 — 23 February 2011

7 of 12

NXP Semiconductors

BLS7G2933S-150

LDMOS S-band radar power transistor

8.

Test information

Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with

ε

thickness = 0.64 mm.

See Table 9 for list of components.

Fig 7.

Component layout for application circuit

Table 9.

List of components

See Figure 7.

Component

Description

Value

Remarks

C1

multilayer ceramic chip capacitor

10

μF; 20 V

C2, C8

multilayer ceramic chip capacitor

1 nF

ATC 700A or equivalent

C3, C9

multilayer ceramic chip capacitor

100 pF

ATC 100A or equivalent

C4, C5, C6, C7

multilayer ceramic chip capacitor

10 pF

ATC 100A or equivalent

C10

electrolytic capacitor

68

μF; 63 V

R1

SMD resistor

10

Ω

SMD 0603

001aan033

C1

C2 C3

C4

C5

C7

C8 C9

C6

C10

R1