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IRHYK57133CMSE Datasheet(PDF) 1 Page - International Rectifier |
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IRHYK57133CMSE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  RADIATION HARDENED IRHYK57133CMSE POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA) 130V, N-CHANNEL TECHNOLOGY 5 5 Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 20 ID@ VGS = 12V, TC = 100°C Continuous Drain Current 12.5 IDM Pulsed Drain Current À 80 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 73 mJ IAR Avalanche Current À 20 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  11.3 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Pack. Mounting Surface Temp. 300 (for 5s) Weight 3.7 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A www.irf.com 1 Product Summary Part Number Radiation Level RDS(on) ID IRHYK57133CMSE 100K Rads (Si) 0.082 Ω 20A For footnotes refer to the last page 10/28/04 Low-Ohmic TO-257AA Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight PD - 96898 |
Similar Part No. - IRHYK57133CMSE_15 |
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Similar Description - IRHYK57133CMSE_15 |
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