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IRHYB67134CM Datasheet(PDF) 3 Page - International Rectifier |
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IRHYB67134CM Datasheet(HTML) 3 Page - International Rectifier |
3 / 9 page www.irf.com 3 Pre-Irradiation IRHYB67134CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Fig a. Typical Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page 1. Part numbers IRHYB67134CM and IRHYB63134CM Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter Up to 300K Rads (Si)1 Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 150 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 10 µA VDS= 120V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 0.092 Ω VGS = 12V, ID = 12A RDS(on) Static Drain-to-Source On-State VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 19A Resistance (Low Ohmic TO-257) — 0.090 Ω VGS = 12V, ID = 12A Table 2. Typical Single Event Effect Safe Operating Area LET Energy RangeVDS (V) (MeV/(mg/cm 2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= 0V -5V -10V -15V -20V 39 ± 5% 410 ± 5% 50 ± 5% 150 150 150 150 150 61 ± 5% 825 ± 5% 66 ± 7.5% 150 150 150 40 - 90 ± 5% 1470 ± 5% 80 ± 5% 50 50 30 - - 0 25 50 75 100 125 150 175 -20 -15 -10 -5 0 Bias VGS (V) LET=39 ± 5% LET=61 ± 5% LET=90 ± 5% |
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