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6N60Z Datasheet(PDF) 3 Page - Unisonic Technologies |
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6N60Z Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 6N60Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-741.C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA VDS = 480V, VGS = 0V, TJ=125°C 100 μA Gate- Source Leakage Current Forward IGSS VGS = 20V, VDS = 0V 10 μA Reverse VGS = -20V, VDS = 0V -10 μA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.4 1.75 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 770 1000 pF Output Capacitance COSS 95 120 pF Reverse Transfer Capacitance CRSS 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VGS=0~10V, VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) 45 60 ns Turn-On Rise Time tR 95 110 ns Turn-Off Delay Time tD(OFF) 185 200 ns Turn-Off Fall Time tF 110 125 ns Total Gate Charge QG VGS=10V, VDD=50V, ID=1.3A IG=100μA (Note 1, 2) 32.8 nC Gate-Source Charge QGS 7.0 nC Gate-Drain Charge QGD 9.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 24.8 A Reverse Recovery Time trr VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/μs (Note 1) 290 ns Reverse Recovery Charge QRR 2.35 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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