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IRHQ57214SE Datasheet(PDF) 1 Page - International Rectifier |
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IRHQ57214SE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings (Per Die) Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 1.9 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 1.2 IDM Pulsed Drain Current À 7.6 PD @ TC = 25°C Max. Power Dissipation 12 W Linear Derating Factor 0.1 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 30 mJ IAR Avalanche Current À 1.9 A EAR Repetitive Avalanche Energy À 1.2 mJ dv/dt Peak Diode Recovery dv/dt  5.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.89 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects(SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. °C A RADIATION HARDENED IRHQ57214SE POWER MOSFET SURFACE MOUNT (LCC-28) 12/20/11 www.irf.com 1 250V, QUAD N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHQ57214SE 100K Rads (Si) 1.5 Ω 1.9A For footnotes refer to the last page 5 5 LCC-28 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight PD-93881D |
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