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AN5950 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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AN5950 Datasheet(HTML) 6 Page - Dynex Semiconductor |
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6 / 23 page  AN 5950 Page 6 of 23 in the construction of the device. The storage temperature range is conservatively set at - 55°C to 125°C. Fm – Clamping force Correct clamping of the device is necessary to assure the electrical and thermal contact to the active part of the device. The recommended maximum and minimum force is stated for each device type (see Appendix 3 and Application note AN4839). DYNAMIC CHARACTERISTICS IRRM/IDRM – Peak reverse and off-state current IRRM and IDRM are the maximum blocking currents when VRRM and VDRM are applied to the device respectively. These currents are temperature dependant and specified at Tcase = 125°C and tp= 10ms. Note that for high voltage devices the blocking current can contribute substantially to the power losses. dV/dt – Maximum Linear rate of rise of off- state voltage This is the maximum value for the linear rate of rise of forward voltage (from 0V to 67%VDRM) that can be applied without initiating turn-on in the thyristor with the gate open circuit. It is not advisable to exceed this value as it will cause uncontrolled turn-on in the device and may cause damage. It is usual practice to protect the device against excessive values of dV/dt by use of an additional snubber circuit (RC or RCD snubber circuit). The dV/dt capability of a thyristor reduces with increasing temperature. This is because triggering of the thyristor is initiated by the sum of the junction leakage current, the Cdv/dt displacement current and the gate current. dV/dt is specified at Tcase = 125°C which should be the worst case. dI/dt – Rate of rise of on-state current This is the maximum rate of rise of on-state current (load current) for which two values are specified; repetitive @50Hz and non- repetitive. These values are specified under the conditions of forward blocking voltage of 67%VDRM, peak forward current of twice the rated average current (2xIT(AV)), Tj = 125°C and the gate conditions for each device type (gate source voltage, gate resistance and the gate current rise time). When a thyristor is triggered on the initial conduction area is small and hence the current carrying capacity is limited. If the dI/dt rating is exceeded then damage to the thyristor may occur. It is advisable to control the dI/dt of the load current by use of turn-on snubber circuit (usually a clamped reactor). Note that the dI/dt snubber discharge current should be included in dI/dt considerations. VT(TO) – Threshold voltage For a simple calculation of conduction losses of a thyristor, the on state IV characteristic is approximated to a straight line and an intercept on the voltage - axis. The intercept is called the threshold voltage. Two values of VT(TO) are given on the datasheets to give more accurate approximations by splitting the IV curve into a low level current range and a high level current range. rT – On-state slope resistance The straight line in the above approximation is also defined by a slope (dIT/dVT) = 1/rT where rT is called the slope resistance (dVT/dIT). Once again rT is specified for low and high level current range respectively. A full explanation of how VT(TO) and rT are derived is given in the Appendix 2. |
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