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IRHQ57110 Datasheet(PDF) 1 Page - International Rectifier |
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IRHQ57110 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 05/0115 www.irf.com 1 LCC-28 IRHQ57110 100V, Quad N-CHANNEL TECHNOLOGY Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight Product Summary Part Number Radiation Level RDS(on) ID IRHQ57110 100K Rads (Si) 0.27 Ω 4.6A IRHQ53110 300K Rads (Si) 0.27 Ω 4.6A IRHQ54110 500K Rads (Si) 0.27 Ω 4.6A IRHQ58110 1000K Rads (Si) 0.29 Ω 4.6A Absolute Maximum Ratings (Per Die) Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 4.6 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 2.9 IDM Pulsed Drain Current À 18.4 PD @ TC = 25°C Max. Power Dissipation 12 W Linear Derating Factor 0.1 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 47 mJ IAR Avalanche Current À 4.6 A EAR Repetitive Avalanche Energy À 1.2 mJ dv/dt Peak Diode Recovery dv/dt  6.1 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range °C Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.89 (Typical) g A For footnotes refer to the last page Pre-Irradiation 5 5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. n ESD Rating: Class 1A per MIL-STD-750, Method 1020 PD-94211E |
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