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IRHNA57264SE Datasheet(PDF) 1 Page - International Rectifier |
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IRHNA57264SE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  09/12/07 Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 45 ID@ VGS = 12V, TC = 100°C Continuous Drain Current 28 IDM Pulsed Drain Current À 180 PD @ TC = 25°C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 222 mJ IAR Avalanche Current À 45 A EAR Repetitive Avalanche Energy À 250 mJ dv/dt Peak Diode Recovery dv/dt  5.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 3.3 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. °C A www.irf.com 1 SMD-2 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight For footnotes refer to the last page RADIATION HARDENED JANSR2N7474U2 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/684 TECHNOLOGY IRHNA57264SE 5 5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57264SE 100K Rads (Si) 0.06 Ω 45A JANSR2N7474U2 PD-93816E |
Similar Part No. - IRHNA57264SE_15 |
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Similar Description - IRHNA57264SE_15 |
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