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IRHMS57Z60 Datasheet(PDF) 3 Page - International Rectifier |
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IRHMS57Z60 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHMS57Z60, JANSR2N7478T1 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter Up to 500KRads(Si)1 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 30 — 30 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 24V, VGS = 0V RDS(on) Static Drain-to-Source — 0.0040 — 0.0045 Ω VGS =12V, ID = 45A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source On-State — 0.0055 — 0.0060 Ω VGS =12V, ID = 45A Resistance (Low-Ohmic TO-254) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1. Part numbers IRHMS57Z60 (JANSR2N7478T1), IRHMS53Z60 (JANSF2N7478T1) and IRHMS54Z60 (JANSG2N7478T1) 2. Part number IRHMS58Z60 (JANSH2N7478T1) VSD Diode Forward Voltage — 1.2 — 1.2 V VGS = 0V, IS = 45A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy RangeVDS (V) (MeV/(mg/cm 2)) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -20V 38 ± 5% 300 ± 7.5% 38 ± 7.5% 30 30 30 22.5 15 61 ± 5% 330 ± 7.5% 31 ± 10% 25 25 20 15 7.5 84 ± 5% 350 ± 10% 28 ± 7.5% 25 25 20 - - Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page 0 5 10 15 20 25 30 35 -20 -15 -10 -5 0 Bias VGS (V) LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% |
Similar Part No. - IRHMS57Z60_15 |
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Similar Description - IRHMS57Z60_15 |
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