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IRHM9160 Datasheet(PDF) 1 Page - International Rectifier

Part # IRHM9160
Description  Simple Drive Requirements
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHM9160 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @VGS = -12V, TC = 25°C Continuous Drain Current
-35*
ID @VGS = -12V, TC = 100°C Continuous Drain Current
-24
IDM
Pulsed Drain Current
À
-140
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
Á
500
mJ
IAR
Avalanche Current
À
-35
A
EAR
Repetitive Avalanche Energy
À
25
mJ
dv/dt
Peak Diode Recovery dv/dt
Â
-16
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g
PD-91415G
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFETTM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
oC
A
04/20/05
www.irf.com
1
TO-254AA
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHM9160
100K Rads (Si)
0.073
-35A*
JANSR2N7425
IRHM93160
300K Rads (Si) 0.073
-35A*
JANSF2N7425
For footnotes refer to the last page
IRHM9160
JANSR2N7425
RADIATION HARDENED
100V, P-CHANNEL
POWER MOSFET
REF: MIL-PRF-19500/660
THRU-HOLE (TO-254AA)
RAD-Hard
HEXFET
® TECHNOLOGY
*Current is limited by package
Features:
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n
Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Eyelets
n
Electrically Isolated
n
Light Weight


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