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BLL6H0514-25 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLL6H0514-25 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page BLL6H0514-25_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 30 March 2010 3 of 12 NXP Semiconductors BLL6H0514-25 LDMOS driver transistor 6. Characteristics 6.1 Ruggedness in class-AB operation The BLL6H0514-25 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =50V; IDq =50mA; PL = 25 W; f = 1.2 GHz; tp = 128 μs; δ = 10 %. Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 630 mA 110 - - V VGS(th) gate-source threshold voltage VDS =10 V; ID = 18 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS =0V; VDS =50V - - 1 μA IDSX drain cut-off current VGS =VGS(th) +3.75V; VDS =10V 2.1 2.5 - A IGSS gate leakage current VGS =11V; VDS = 0 V - - 100 nA gfs forward transconductance VDS =10V; ID =18 mA 120 150 - mS RDS(on) drain-source on-state resistance VGS =VGS(th) +3.75 V; ID =63mA - 1500 2750 m Ω Table 7. RF characteristics Mode of operation: pulsed RF; tp = 128 μs; δ = 10 %; RF performance at VDS =50V; IDq =50mA; f = 1.2 GHz; Tcase =25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL output power 25 - - W VDS drain-source voltage PL = 25 W --50 V Gp power gain PL = 25 W 20 21 - dB RLin input return loss PL = 25 W 10 15 - dB η D drain efficiency PL = 25 W 57 59 - % Pdroop(pulse) pulse droop power PL =25W - 0 0.3 dB tr rise time PL =25W - 20 50 ns tf fall time PL =25W - 6 50 ns |
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