Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

BLL6H0514-25 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLL6H0514-25
Description  LDMOS driver transistor
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLL6H0514-25 Datasheet(HTML) 3 Page - NXP Semiconductors

  BLL6H0514-25_15 Datasheet HTML 1Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 2Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 3Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 4Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 5Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 6Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 7Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 8Page - NXP Semiconductors BLL6H0514-25_15 Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 12 page
background image
BLL6H0514-25_4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 30 March 2010
3 of 12
NXP Semiconductors
BLL6H0514-25
LDMOS driver transistor
6.
Characteristics
6.1 Ruggedness in class-AB operation
The BLL6H0514-25 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =50V;
IDq =50mA; PL = 25 W; f = 1.2 GHz; tp = 128 μs; δ = 10 %.
Table 6.
DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 630 mA
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS =10 V; ID = 18 mA
1.4
1.9
2.4
V
IDSS
drain leakage current
VGS =0V; VDS =50V
-
-
1
μA
IDSX
drain cut-off current
VGS =VGS(th) +3.75V;
VDS =10V
2.1
2.5
-
A
IGSS
gate leakage current
VGS =11V; VDS = 0 V
-
-
100
nA
gfs
forward transconductance
VDS =10V; ID =18 mA
120
150
-
mS
RDS(on)
drain-source on-state resistance VGS =VGS(th) +3.75 V;
ID =63mA
-
1500
2750
m
Ω
Table 7.
RF characteristics
Mode of operation: pulsed RF; tp = 128 μs; δ = 10 %; RF performance at VDS =50V; IDq =50mA;
f = 1.2 GHz; Tcase =25 °C; unless otherwise specified, in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PL
output power
25
-
-
W
VDS
drain-source voltage
PL = 25 W
--50
V
Gp
power gain
PL = 25 W
20
21
-
dB
RLin
input return loss
PL = 25 W
10
15
-
dB
η
D
drain efficiency
PL = 25 W
57
59
-
%
Pdroop(pulse)
pulse droop power
PL =25W
-
0
0.3
dB
tr
rise time
PL =25W
-
20
50
ns
tf
fall time
PL =25W
-
6
50
ns


Similar Part No. - BLL6H0514-25_15

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors
BLL6H0514-25 NXP-BLL6H0514-25 Datasheet
128Kb / 12P
   LDMOS driver transistor
Rev. 04-30 March 2010
BLL6H0514-25 NXP-BLL6H0514-25 Datasheet
9Mb / 130P
   RF Manual 16th edition
June 2012
logo
Ampleon Netherlands B.V...
BLL6H0514-25 AMPLEON-BLL6H0514-25 Datasheet
880Kb / 12P
   LDMOS driver transistor
Rev. 5 ??1 September 2015
More results

Similar Description - BLL6H0514-25_15

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors
BLP7G22-10 PHILIPS-BLP7G22-10_15 Datasheet
192Kb / 16P
   LDMOS driver transistor
Rev. 2-30 May 2013
BLL6H0514L-130 NXP-BLL6H0514L-130 Datasheet
320Kb / 13P
   LDMOS driver transistor
Rev. 1-9 August 2010
BLL6H0514-25 NXP-BLL6H0514-25 Datasheet
128Kb / 12P
   LDMOS driver transistor
Rev. 04-30 March 2010
BLL6H0514L PHILIPS-BLL6H0514L_15 Datasheet
133Kb / 13P
   LDMOS driver transistor
Rev. 2-13 September 2010
BLL8H0514L-130 PHILIPS-BLL8H0514L-130_15 Datasheet
164Kb / 13P
   LDMOS driver transistor
Rev. 2-9 February 2015
BLP7G22-05 PHILIPS-BLP7G22-05_15 Datasheet
194Kb / 11P
   LDMOS driver transistor
Rev. 2-20 August 2013
logo
Ampleon Netherlands B.V...
BLL6H0514L-130 AMPLEON-BLL6H0514L-130 Datasheet
932Kb / 13P
   LDMOS driver transistor
Rev. 3 ??1 September 2015
BLL8H0514L-130 AMPLEON-BLL8H0514L-130 Datasheet
942Kb / 13P
   LDMOS driver transistor
Rev. 3 ??1 September 2015
BLL6H0514-25 AMPLEON-BLL6H0514-25 Datasheet
880Kb / 12P
   LDMOS driver transistor
Rev. 5 ??1 September 2015
logo
NXP Semiconductors
BLP25M705 PHILIPS-BLP25M705_15 Datasheet
103Kb / 9P
   Broadband LDMOS driver transistor
Rev. 2-9 February 2015
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com