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ZD5226B Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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ZD5226B Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 15 page  CYStech Electronics Corp. Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : 2014.05.07 Page No. : 1/15 ZD52XXBN3 series CYStek Product Specification Zener Diode Series ZD52XXBN3 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board TA=25 °C, Derate above 25°C PD 225 1.8 mW mW/ °C Total Device Dissipation Alumina Substrate**TA=25 °C, Derate above 25°C PD 300 2.4 mW mW/ °C Thermal Resistance Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature Tj, Tstg -55 to +150 °C *FR-5 - 1.0 ×0.75×0.062 in. **Alumina - 0.4×0.3×0.024 in. 99.5% alumina. Electrical Characteristic (VF=0.9V Max @IF=10mA for all types.) Test Current Zener Voltage ZZK IZ=0.25mA ZZT IZ=IZT Max. Reverse Current Device Marking Code IZT(mA) VZ(V) ( Ω,Max) ( Ω,Max) IR(uA) @VR(V) ZD5221B 18A 20 2.4 ±5% 1200 30 100 1.0 ZD5222B 18B 20 2.5 ±5% 1250 30 100 1.0 ZD5223B 18C 20 2.7 ±5% 1300 30 75 1.0 ZD5225B 18E 20 3.0 ±5% 1600 29 50 1.0 ZD5226B 8A 20 3.3 ±5% 1600 28 25 1.0 ZD5227B 8B 20 3.6 ±5% 1700 24 15 1.0 ZD5228B 8C 20 3.9 ±5% 1900 23 10 1.0 ZD5229B 8D 20 4.3 ±5% 2000 22 5.0 1.0 ZD5230B 8E 20 4.7 ±5% 1900 19 5.0 2.0 ZD5231B 8F 20 5.1 ±5% 1600 17 5.0 2.0 ZD5232B 8G 20 5.6 ±5% 1600 11 5.0 3.0 ZD5233B 8H 20 6.0 ±5% 1600 7.0 5.0 3.5 ZD5234B 8J 20 6.2 ±5% 1000 7.0 5.0 4.0 ZD5235B 8K 20 6.8 ±5% 750 5.0 3.0 5.0 ZD5236B 8L 20 7.5 ±5% 500 6.0 3.0 6.0 ZD5237B 8M 20 8.2 ±5% 500 8.0 3.0 6.5 ZD5238B 8N 20 8.7 ±5% 600 8.0 3.0 6.5 ZD5239B 8P 20 9.1 ±5% 600 10 3.0 7.0 ZD5240B KF5 20 10 ±5% 600 17 3.0 8.0 ZD5241B 8R 20 11 ±5% 600 22 2.0 8.4 ZD5242B 8S 20 12 ±5% 600 30 1.0 9.1 ZD5243B 8T 9.5 13 ±5% 600 13 0.5 9.9 ZD5244B 8U 9.0 14 ±5% 600 15 0.1 10 SOT-23 |
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