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BLF578XR Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF578XR Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 12 July 2013 3 of 15 NXP Semiconductors BLF578XR; BLF578XRS Power LDMOS transistor 5. Thermal characteristics [1] Tj is the junction temperature. [2] Rth(j-c) is measured under RF conditions. [3] See Figure 1. Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tj = 150 C [1][2] 0.11 K/W Zth(j-c) transient thermal impedance from junction to case Tj = 150 C; tp =100 s; =20% [3] 0.033 K/W (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as a function of pulse duration |
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Similar Description - BLF578XR_15 |
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