BLF578_15 datasheet(4/14 Pages) PHILIPS

Part #	BLF578

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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4 / 14 page

BLF578_2

Product data sheet

Rev. 02 — 4 February 2010

4 of 14

NXP Semiconductors

BLF578

Power LDMOS transistor

6.1 Ruggedness in class-AB operation

The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1

through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W

pulsed; f = 225 MHz.

IDSX

drain cut-off current

VGS = VGS(th) + 3.75 V;

VDS = 10 V

58

70

-

A

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

-

280

nA

RDS(on)

drain-source on-state

resistance

VGS = VGS(th) + 3.75 V;

ID = 16.66 A

-

0.07

-

Ω

Crs

feedback capacitance

VGS = 0 V; VDS = 50 V;

f = 1 MHz

-

3

-

pF

Ciss

input capacitance

VGS = 0 V; VDS = 50 V;

f = 1 MHz

-

403

-

pF

Coss

output capacitance

VGS = 0 V; VDS = 50 V;

f = 1 MHz

-

138

-

pF

Table 7.

RF characteristics

Mode of operation: pulsed RF; tp = 100 μs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V;

IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Gp

power gain

PL = 1200 W

23

24

25.4

dB

RLin

input return loss

PL = 1200 W

14

17.5

-

dB

η

D

drain efficiency

PL = 1200 W

68

71

-

%

VGS = 0 V; f = 1 MHz.

Fig 2.

Output capacitance as a function of drain-source voltage; typical values per

section

Table 6.

DC characteristics …continued

Tj = 25 °C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VDS (V)

050

20

30

40

10

001aaj113

300

150

450

600

750

900

Coss

(pF)

0

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