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BLF188XR Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLF188XR Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applications BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet Table 1. Application information Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 2 to 30 50 1270 29.0 75 27 50 1400 23.7 73 41 50 1200 22.0 82 60 48 1240 22.0 77 72.5 50 1350 23.1 83 81.4 50 1200 27.1 77.8 88 to 108 50 1320 22.5 85 108 50 1200 26.5 83 200 50 1288 19.3 68.3 pulsed RF 81.4 50 1200 25.8 85 81.4 50 1400 25.4 81 108 50 1400 24.0 73 DVB-T 174 to 230 50 225 23.8 29 |
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Similar Description - BLF188XR_15 |
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